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| ELC-550-10 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip | |||
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LED - Chip
Radiation
Green
235
117
Type
Standard
ELС-550-10
07.01.2008
rev. 04
Technology
Electrodes
GaP/GaP
P (anode) up
typ. dimensions (µm)
typ. thickness
270 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
structured, 25% covered
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
IF = 20 mA
VF
2.15
Reverse voltage
IR = 10 µA
VR
5
Luminous intensity1
IF = 20 mA
IV
1.1
1.4
Luminous intensity2
IF = 20 mA
IV
2.2
Peak wavelength
IF = 20 mA
λP
540
550
Dominant wavelength
IF = 20 mA
λD
557
Spectral bandwidth at 50% IF = 20 mA
âλ0.5
24
1Measured on bare chip on TO-18 header with EPIGAP equipment
2Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Max
Unit
2.4
V
V
mcd
mcd
560
nm
nm
nm
Labeling
Type
ELС-550-10
Lot N°
ÎV(typ) [mcd] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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