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| ELC-525-31 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip | |||
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LED - Chip
Preliminary
Radiation
Green
1000
N
N
Type
Standard
P
P
10.04.2007
Technology
InGaN/Al2O3
ELС-525-31
rev. 01/07
Electrodes
Both on top side
typ. dimensions (±25) µm
typ. thickness
90 (±10) µm
contact metalization
gold alloy, 1.5 µm
backside metalization
aluminium alloy, 1.0 µm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
IF = 20 mA
VF
Forward voltage1
IF = 350 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Luminous intensity1)
IF = 20 mA
ÎV
1300
Luminous intensity1)
IF = 350 mA
ÎV
12000
Peak wavelength
IF = 20 mA
λP
Dominant wavelength
IF = 350 mA
λD
515
Spectral bandwidth at 50% IF = 20 mA
âλ0.5
Switching time
IF = 20 mA
tr, tf
1)Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
2.5
3.19
1500
14000
524
525
35
10
Max
Unit
3.1
V
3.7
V
V
mcd
mcd
nm
535
nm
nm
ns
Labeling
Type
ELС-525-31
Lot N°
Îv(typ) [mcd] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
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