ELC-490-37 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Green
Type
Standard
380 µm
P
Ø 90µm
100 µm
N
350 µm
10.04.2007
Technology
InGaN/Al₂O₃
ELС-490-37
rev. 01/07
Electrodes
Both on top side
typ. dimensions in µm (±20 µm)
typ. thickness
90 (±20) µm
front side metalization
Au-alloy, 0.5 µm
backside metalization
Al-alloy, 1.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Operating temperature range
Storage temperature range
Test conditions
(t_P ≤ 50 µs, t_P /T = 1/2)
Symbol
Value
Unit
I_F
I_FM
T_amb
T_stg
20
mA
100
mA
-40 to +85
°C
-40 to +100
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Reverse voltage
I_F = 1 µA
V_R
5
Luminous intensity¹
I_F = 20 mA
Ι_v
220
Dominant wavelength
I_F = 20 mA
λ_D
480
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Switching time
I_F = 20 mA
t_r, t_f
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
Typ
Max
Unit
3.3
3.5
V
V
280
mcd
490
500
nm
25
nm
20
ns
Labeling
Type
ELС-490-37
Lot N°
Ι_v(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Quantity
1 of 1