ELC-470-31-1 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Blue
1000
N
N
Type
Standard
P
P
ELС-470-31-1
10.04.2007
rev. 02/07
Technology
InGaN/Al₂O₃
Electrodes
Both on top side
typ. dimensions (±25) µm
typ. thickness
90 (±10) µm
contact metalization
gold alloy, 1.5 µm
backside metalization
aluminium alloy, 1.0 µm
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward voltage
I_F = 20 mA
Forward voltage¹⁾
I_F = 350 mA
Reverse voltage
I_R = 10 µA
Radiant power
I_F = 20 mA
Radiant power^1,2)
I_F = 350 mA
Luminous intensity¹⁾
I_F = 350 mA
Peak wavelength
I_F = 350 mA
Dominant wavelength
I_F = 350 mA
Spectral bandwidth at 50% I_F = 350 mA
Switching time
I_F = 20 mA
1) _{Measured on bare chip on TO-18 header}
2) _{information only}
Symbol
V_F
V_F
V_R
Φ_e
Φ_e
Ι_V
λ_P
λ_P
∆λ_0.5
t_r, t_f
Min
5
8.8
6000
465
Typ
2.7
3.24
11.5
150
6500
467
470
35
60
Max
Unit
3.0
V
3.7
V
V
mW
mW
mcd
nm
475
nm
nm
ns
Labeling
Type
ELС-470-31-1
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Quantity
1 of 1