ELC-420-21 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Violet
Type
Special
10.04.2008
Technology
InGaN
ELС-420-21
rev. 01
Electrodes
N (cathode) up
typ. dimensions (±50) µm
typ. thickness
145 (±15) µm
cathode
gold alloy, 2.5 µm
anode
gold alloy, 1.5 µm
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Operating temperature range
Storage temperature range
Junction temperature
Test сonditions
t_p≤100 µs, D = 0.05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage¹
I_F = 350 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
10
Radiant power^1,2
I_F = 350 mA
Φ_e
Peak wavelength
I_F = 350 mA
λ_P
410
Spectral bandwidth at 50% I_F = 350 mA
∆λ_0.5
Switching time
I_F = 350 mA
t_r, t_f
1)_{Measured on bare chip on TO-66 header}
2)_{only recommended on optimal heat sink}
Labeling
Type
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
ELС-420-21
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
Symbol
Value
Unit
I_F
I_FM
T_amb
T_stg
T_j
500
mA
2
A
-40 to +110
°C
-40 to +110
°C
125
°C
Typ
Max
Unit
2.8
3.2
V
3.1
3.5
V
V
14
mW
240
mW
420
430
nm
20
nm
30
ns
λ_P(typ) [nm]
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 1