ELC-410-37 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Violet
Type
Standard
380 µm
P
Ø 90µm
100 µm
N
350 µm
10.04.2007
Technology
InGaN/Al₂O₃
ELС-410-37
rev. 02/07
Electrodes
Both on top side
typ. dimensions in µm (±20 µm)
typ. thickness
90 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
3,6
Reverse voltage
I_F = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
1,9
3,0
Radiant intensity¹
I_F = 20 mA
Ι_e
1,0
1,3
Peak wavelength
I_F = 20 mA
λ_p
400
410
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
17
Switching time
I_F = 20 mA
t_r, t_f
20
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-410-37
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
4,5
V
V
mW
mW/sr
420
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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