ELC-1550-17 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
Type
MQW
360
300
R
116
ELC-1550-17
10.04.2007
rev. 02/06
Technology
InGaAs/InP
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
LED-11
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward current (DC)
I_F
Peak forward current
t_P ≤ 50 µs, t_P/T
= 1/2
I_FM
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage
I_F = 100 mA
V_F
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
0.47
Radiant power¹
I_F = 100 mA
Φ_e
1.7
Radiant power²
I_F = 100 mA
Φ_e
Peak wavelength
I_F = 100 mA
λ_p
1530
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
Switching time
I_F = 100 mA
t_r, t_f
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Typ
0.75
0.85
0.7
2.5
5.0
1550
130
10
Labeling
Type
ELС-1550-17
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
100
mA
200
mA
Max
Unit
0.9
V
1.0
V
V
mW
mW
mW
1570
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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