ELC-1060-17 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
Type
MQW
360
300
R ₁₁₆
ELC-1060-17
10.04.2007
rev. 02/06
Technology
InGaAs/InP
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
LED-11
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward current (DC)
Peak forward current
t_P ≤ 50 µs,
t_P/T = 1/2
Symbol
I_F
I_FM
Min
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage
I_F = 100 mA
V_F
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
0.4
Radiant power¹
I_F = 100 mA
Φ_e
2.0
Radiant power²
I_F = 100 mA
Φ_e
Peak wavelength
I_F = 100 mA
λ_p
1040
Spectral bandwidth at 50%
I_F = 100 mA
∆λ_0.5
Switching time
I_F = 100 mA
t_r, t_f
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-1060-17
Lot N°
Φ_e(typ) [mW]
Packing: Chips on adhesive film with wire-bond side on top
Typ
Typ
1.05
1.20
0.6
2.8
5.5
1060
50
10
V_F(typ) [V]
Max
Unit
100
mA
200
mA
Max
Unit
1.3
V
1.4
V
V
mW
mW
mW
1080
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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