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| EDC-660-19-02 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – 7-Segment LED-Chip | |||
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7-Segment LED-Chip
Preliminary
Radiation
Red
Type
Diffusion type
EDC-660-19-02
6/22/2007
rev. 05/07
Technology
GaAsP/GaAs
Electrodes
P (anode) up
690
275
24
typ. dimensions (µm)
typ. thickness
330 µm
cathode
Au-alloy metalization
anode
Al metalization
Application
This miniature device is an
excellent choice for
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Temperature coefficient of λC
Operating temperature range
Storage temperature range
Test Ñonditions
Ta = -40..120°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions1 Symbol
Min
Forward voltage
IF = 5 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Luminous intensity/segment2 IF = 5 mA
Iv
55
IV ratio segment to segment2 IF = 5 mA
IV ratio to adjacent chip
IF = 5 mA
Peak wavelength
IF = 5 mA
λp
645
Spectral bandwidth at 50%
IF = 5 mA
1Current for one segment
2Measured on bare chip on TO-18 header
âλ0.5
Symbol
TC(λC)
Tamb
Tstg
Value
0.15
-40 to +120
-40 to +125
Unit
nm/K
°C
°C
Typ
Max
Unit
1.75
2.0
V
V
80
µcd
1.75
2.00
655
665
nm
17
nm
Labeling
Type
Lot N°
Iv(typ) [µcd] VF(typ) [V]
EDC-660-19-02
Packing: Chips in wafer pack or on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Quantity
1 of 1
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