EDC-660-19-01 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – 7-Segment LED-Chip

7-Segment LED-Chip
Preliminary
Radiation
Type
Red
Diffusion type
1000
30
425
EDC-660-19-01
6/22/2007
rev. 05/07
Technology
Electrodes
GaAsP/GaAs
P (anode) up
typ. dimensions (µm)
typ. thickness
330 µm
cathode
Au-alloy metalization
anode
Al metalization
Application
This miniature device is an
excellent choice for
applications where small
size and reduced space
are important factors such
as complex displays in
optical devices for
laboratory, measurement,
control- and medical
equipment.
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Temperature coefficient of λ_C
Operating temperature range
Storage temperature range
T_a = -40..120°C
T_C(λ_C)
T_amb
T_stg
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions^{1 Symbol}
Min
Typ
Forward voltage
I_F = 5 mA
V_F
1.7
Forward voltage
I_F = 20 mA
V_F
1.8
Reverse voltage
I_R = 100 µA
V_R
5
Luminous intensity/segment^{2 I}F ^{= 5 mA}
I_v
60
85
Luminous intensity/segment^{2 I}F ^{= 20 mA}
I_v
280
400
Luminous intensity/segment^{3 I}F ^{= 20 mA}
I_v
710
I_V ratio segment to segment² IF = 20 mA
I_V ratio to adjacent chip
I_F = 20 mA
Peak wavelength
I_F = 20 mA
λ_p
650
660
Spectral bandwidth at 50%
I_F = 20 mA
∆λ_0.5
17
1_{Current for one segment}
2_{Measured on bare chip on TO-18 header}
3_{Measured on epoxy covered chip on TO-18 header}
Labeling
Type
Lot N°
I_V(typ) [µcd] V_F(typ) [V]
EDC-660-19-01
Packing: Chips in wafer pack or on adhesive film with wire-bond side on top
Value
0.15
-30 to +100
-40 to +125
Unit
nm/K
°C
°C
Max
Unit
1.9
V
2.1
V
V
µcd
µcd
µcd
1.75
2.00
670
nm
nm
Quantity
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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