EPC120 Datasheet, PDF (2/27 Pages) Espros Photonics corp – Fully integrated Light-Barrier Chips with 2-Wire Bus Interface

epc120
Absolute Maximum Ratings (Notes 1, 2)
Voltage to any pin except VDD
Supply Voltage on 2-wire bus VDD
Programming Voltage on 2-wire bus VDD
Input current at any pin except LED
-0.3V to VDD+0.3 V
-0.3V to +8.0V
-0.3V to +8.0V
-6mA to +6 mA
Power consumption with maximum load
125mW
Storage Temperature Range (TS)
Lead Temperature solder, 4 sec. (TL)
-55°C to +155°C
+260°C
Recommended Operating Conditions
Operating Voltage on 2-wire bus V DD
Programming Voltage on VDD
Min.
4.5
7.0
Max.
5.5
8.0
Units
V
V
Operating Temperature (TO)
-40°
+85
°C
Relative Humidity (non-condensing)
+5
+95
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific -
ations and test conditions, see Electrical Characteristics.
Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and
assembly of this device should only be done at ESD protected workstations.
Electrical Characteristics
VDD = 4.5V … 5.5V, -40°C < TA < +85°C, unless otherwise specified
General Data
Symbol Parameter
VPP Ripple on supply voltage,
peak to peak
IDD_OP
Vdet
IMOD
fclk
dfclk
VPUP
VIH
VIL
ILEAKD
VOH
VOL
ISCK/LED
VHist
RPU
IPDDC
Current consumption
Detection level for 2-wire interface
Modulation current for 2-wire inter-
face
Reference clock
Temperature drift of the oscillator
Power-up Threshold Voltage
INPUT
INPUT
Input leakage current
Output high voltage
Output low voltage
Source current
Schmitt Trigger Hysteresis
Pull-Up Resistor
DC Photo Diode Current
CPD
IN_Imin
IN_Imax
IPDN
IPDH
Photodiode Capacitance
Input related noise
Input related noise
Photo Current Sensitivity, normal
threshold
Photo Current Sensitivity, upper
threshold
Conditions/Comments
2-wire interface Vdet
50mV
100mV
200mV
in operation mode IPD = 0 mA
configurable
Input pulse IPD NST
48nA
72nA
108nA
Internal oscillator
The voltage at VDD33 when the device starts up
Logical high (VN can be either VDD or VDD33)
Logical low (VN can be either VDD or VDD33)
Min.
Values
Typ.
50
6.4
1
640
2.4
0.7 *VN
GND
@ 4mA sink except pin SCK/LED
@ 4mA source
VDD- 0.5
@ PIN SCK / LED
0.7
0.1
30
generated by ambient light with no effect to the
0.0
sensitivity
Photodiode Capacitance
@ IPDDC =0
@ IPDDC =IPDDCMax
Parameter SENSN = 011 (60nA). TPulse = 6µs
45
60
Photodiode pulse to generate a status “pulse detected”
Parameter SENSH = 011 (96nA). TPulse = 6µs
1.4
1.6
Photodiode pulse to generate a status “pulse detected”
Max.
150
350
600
2
200
9.8
3
VN
0.3 *VN
10
0.5
1.3
200
2
40
15
20
75
1.8
Units
mV
mV
mV
mA
mV
mA
MHz
ppm/K
V
V
V
µA
V
V
mA
V
kΩ
mA
pF
nA RMS
nA RMS
nA
IPDN
© 2011 ESPROS Photonics Corporation
2
Characteristics subject to change without notice
Datasheet epc12x - V2.1
www.espros.ch