EPC300 Datasheet, PDF (1/10 Pages) Espros Photonics corp – High sensitive photodiodes

epc3xx
High sensitive photodiodes
General Description
Features
The epc3xx family products are high-sensitive photo diodes for  Low dark current
light-barrier, light-curtain, and the like applications. These photo  High quantum efficiency
diodes are designed to be used in a reverse-bias mode.
 High dynamic range
 Diodes can be used in parallel
This device allows the design of short to long range light barriers  CSP package with very small footprint
from a few millimeters up to tens of meters.
 Near infrared and visible version available
 Customer specific wavelength filter upon request
Using chips from the epc3xx product line, linear or two dimen-
sional arrays can be formed for any application, be it triangulation,
spot location, angle measurement, rotary encoders, or similar.
Applications
Also, spectral sensitive detectors can easily be designed by
applying color filters in front of the photo diodes.
 Light barriers ranging from millimeters to tens of meters
 Light curtains
Also, other mechanical dimensions are available upon request. It _{ Smoke detectors}
is be possible to manufacture photo diodes of up to 15x15 mm or _{ Liquid detectors}
even bigger. Such a 15x15 mm device then would contain 450 _{ Heart beat monitors}
individual photo diodes, each of them individually accessible. All _{ Position detection (rotary, linear, angle, etc.)}
diodes feature a very high quantum efficiency of 90% in the near _{ IR remote control of Hi-Fi, TV sets and other equipment}
IR range, a reverse breakdown voltage of up to 30 Volts and a _{ Leveling instruments}
response time down to less than 100ns. All devices are available _{ Differential measurement}
upon request with optical bandpass filters.
 Linear photo diode arrays
Product Range Overview
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R
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R
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R : refer to chapter “Electrical isolation between individual diodes”
Model
Single diode
epc300
epc310
epc320
epc330
No. of
Photo
Diodes
1
2
4
8
16
Diode
Length
(mm)
1.0
1.0
2.0
Diode
Width
(mm)
0.5
1.0
1.0
Total Active Typ. Dark
Area
Current
(mm²)
at 20°C (pA )
0.43
20
0.86
40
1.71
80
Ideal Bias
Voltage
(V)
5
5
5
Wavelength
(nm)
400 - 1050
400 - 1050
400 - 1050
2.0
2.0
3.42
160
5
400 - 1050
4.0
2.0
6.84
320
5
400 - 1050
Type specific characteristics (all diodes of the array connected in parallel)
Footprint
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CSP4
CSP8
CSP16
CSP32
© 2011 ESPROS Photonics Corporation
1
Characteristics subject to change without notice
Datasheet epc3xx - V2.3
www.espros.ch