EM48AM3284LBB Datasheet, PDF (7/22 Pages) Eorex Corporation – 512Mb (4M×4Bank×32) Mobile Synchronous DRAM

EM48AM3284LBB
Recommended DC Operating Conditions
(V_DD=1.7~1.95V, T_A=-25°C ~85°Cfor extended)
Symbol
Parameter
Test Conditions
I_CC1
I_CC2P
I_CC2PS
I_CC2N
I_CC2NS
I_CC3P
I_CC3PS
I_CC3N
I_CC3NS
I_CC4
Operating Current ^{(Note 1)}
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in Power
Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst Mode)
(Note 2)
Burst length=1,
t_RC≥t_RC(min.), I_OL=0mA,
One bank active
CKE≤V_IL(max.), t_CK=15ns
CKE≤V_IL(max.), t_CK= ∞
CKE≥V_IL(min.), t_CK=15ns,
/CS≥V_IH(min.)
Input signals are changed one
time during 30ns
CKE≥V_IL(min.), t_CK= ∞ ,
Input signals are stable
CKE≤V_IL(max.), t_CK=15ns
CKE≤V_IL(max.), t_CK= ∞
CKE≥V_IL(min.), t_CK=15ns,
/CS≥V_IH(min.)
Input signals are changed one
time during 30ns
CKE≥V_IL(min.), t_CK= ∞ ,
Input signals are stable
t_CCD≥2CLKs, I_OL=0mA
I_CC5
Refresh Current ^{(Note 3)}
t_RC≥t_RC(min.)
I_CC6 Slef Refresh Current
CKE≤ 0.2, Full Array, Internal
TCSR = 85°C
*All voltages referenced to V_SS.
Note 1: I_CC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t_CK (min.)
Note 2: I_CC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t_CK (min.)
Note 3: Input signals are changed only one time during t_CK (min.)
Speed
-6
70
1
1
5
2
3
3
15
10
130
90
0.6
Speed
-7.5
65
1
1
5
2
3
3
15
10
110
90
0.6
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
I_IL Input Leakage Current
I_OL Output Leakage Current
V_OH High Level Output Voltage
V_OL Low Level Output Voltage
Test Conditions
0≤V_I≤V_DDQ, V_DDQ=V_DD
All other pins not under test=0V
0≤V_O≤V_DDQ, D_OUT is disabled
I_O=-0.1mA
I_O=+0.1mA
Min. Typ.
-2
-1.5
V_DDQ-0.2
Max. Units
+2 uA
+1.5 uA
V
0.2 V
Nov. 2010
www.eorex.com
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