EM484M1644VTD_15 Datasheet, PDF (4/18 Pages) Eorex Corporation – Synchronous DRAM

eorex
EM484M1644VTD
Absolute Maximum Rating
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-1.0 ~ +4.6
V
VDD, VDDQ
Power Supply Voltage
-1.0 ~ +4.6
V
TOP
Operating Temperature Range
Commercial 0 ~ +70
°C
Extended
-25 ~ +85
TSTG
Storage Temperature Range
-55 ~ +150
°C
PD
Power Dissipation
1.0
W
IOS
Short Circuit Current
50
mA
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside the
limits described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Capacitance (VCC=3.3V, f=1MHz, TA=25°C)
Symbol
Parameter
Min.
Typ.
Max. Units
CCLK
Clock Capacitance
2.0
CI
Input Capacitance for CLK, CKE, Address,
/CS, /RAS, /CAS, /WE, DQML, DQMU
2.0
CO
Input/Output Capacitance
3.5
3.5
pF
3.8
pF
5.5
pF
Recommended DC Operating Conditions (TA=-0°C ~+70°C)
Symbol
Parameter
VDD
Power Supply Voltage
VDDQ
Power Supply Voltage (for I/O Buffer)
VIH
Input Logic High Voltage
VIL
Input Logic Low Voltage
Note: * All voltages referred to VSS.
* VIH (max.) = 4.6V for pulse width 3ns
* VIL (min.) = -1.5V for pulse width 3ns
Min.
Typ.
Max. Units
3.0
3.3
3.6
V
3.0
3.3
3.6
V
2.0
Vdd
VDD+0.3
V
-0.3
0
0.8
V
Apr. 2014
www.eorex.com
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