EM484M3244VTA Datasheet, PDF (11/17 Pages) Eorex Corporation – 128Mb (1M×4Bank×32) Synchronous DRAM

eorex
EM484M3244VTA
Burst Type (A3)
Burst Length
A2 A1 A0
Sequential Addressing
Interleave Addressing
X
X
0
01
01
2
X
X
0
10
10
X
0
0
0123
0123
X
0
1
1230
4
X
1
0
2301
1032
2301
X
1
1
3012
3210
0
0
0
01234567
01234567
0
0
1
12345670
10325476
0
1
0
23456701
23016745
0
1
1
34567012
8
1
0
0
45670123
32107654
45670123
1
0
1
56701234
54761032
1
1
0
67012345
67452301
1
1
1
70123456
76543210
Full Page*
n
n
n
Cn Cn+1 Cn+2……
-
* Page length is a function of I/O organization and column addressing ×32 (CA0 ~ CA7):
Full page = 256bits
1. Command Truth Table
Command
Symbol
CKE
n-1 n
/CS
/RAS
/CAS
/WE
BA0,
BA1
A10
A11,
A9~A10
Ignore Command
DESL H X H X
X XXX
X
No Operation
NOP H X L H
H HXX
X
Burst Stop
BSTH H X L H
H
L XX
X
Read
READ H X L H
L HVL
V
Read with Auto Pre-charge READA H X L H
L HVH
V
Write
WRIT H X L H
L
L
V
L
V
Write with Auto Pre-charge WRITA H X L
L
H HVH
V
Bank Activate
ACT H X L
L
H HVV
V
Pre-charge Select Bank
PRE H X L
L
H
LVL
X
Pre-charge All Banks
PALL H X L L
H
L XH
X
Mode Register Set
MRS H X L L
L
L
L
L
V
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Jul. 2006
11/17
www.eorex.com