EM6164K600V Datasheet, PDF (1/12 Pages) Eorex Corporation – 64Kx16 LP SRAM

64Kx16 LP SRAM EM6164K600V Series
GENERAL DESCRIPTION
The EM6164K600V is a 1,048,576-bit low power CMOS static random access memory organized as
65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6164K600V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6164K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
z Fast access time: 45/55/70ns
z Low power consumption:
Operating current:
23/20/18mA (TYP.)
Standby current: -L/-LL version
10/1µA (TYP.)
z Single 2.7V ~ 3.6V power supply
z All inputs and outputs TTL compatible
z Fully static operation
z Tri-state output
z Data byte control :
LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
z Data retention voltage: 1.5V (MIN.)
z Package:
44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A15
DECODER
64Kx16
MEMORY
ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
I/O DATA
CURCUIT
CONTROL
CIRCUIT
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A15
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
Vcc
Power Supply
Vss
Ground
COLUMN I/O
1
DCC-SR-041002-A