EM6156K600V Datasheet, PDF (1/12 Pages) Eorex Corporation – 256Kx16 LP SRAM

256Kx16 LP SRAM EM6156K600V Series
GENERAL DESCRIPTION
The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as
262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS
technology. Its standby current is stable within the range of operating temperature.
The EM6156K600V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6156K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
z Fast access time: 45/55/70ns
z Low power consumption:
Operating current:
40/30/20mA (TYP.)
Standby current: -L/-LL version
20/2µA (TYP.)
z Single 2.7V ~ 3.6V power supply
z All inputs and outputs TTL compatible
z Fully static operation
z Tri-state output
z Data byte control :
LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
z Data retention voltage: 1.5V (MIN.)
z Package:
44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A17
DECODER
256Kx16
MEMORY
ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
I/O DATA
CURCUIT
CONTROL
CIRCUIT
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A17
Address Inputs
DQ0 – DQ17 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
Vcc
Power Supply
Vss
Ground
COLUMN I/O
1
DCC-SR-041003-A