EM6132K800W Datasheet, PDF (1/12 Pages) Eorex Corporation – 32Kx8 LP SRAM

32Kx8 LP SRAM EM6132K800W Series
GENERAL DESCRIPTION
The EM6132K800W is a 262,144-bit low power CMOS static random access memory organized as
32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6132K800W is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6132K800W operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
z Fast access time: 35/55/70ns
z Low power consumption:
Operating current:
20/15/10mA (TYP.), VCC = 2.7 ~ 3.6V; 40/35/30mA (TYP.), VCC = 4.5 ~ 5.5V
Standby current: -L/-LL version
1/0.5µA (TYP.), VCC = 2.7 ~ 3.6V; 2/1µA (TYP.), VCC = 4.5 ~ 5.5V
z Single 2.7V ~ 5.5V power supply
z All inputs and outputs TTL compatible
z Fully static operation
z Tri-state output
z Data retention voltage: 2.0V (MIN.)
z Package: 28-pin 600 mil PDIP
28-pin 330 mil SOP
28-pin 8mm x 13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A14
DECODER
32Kx8
MEMORY
ARRAY
DQ0-DQ7
I/O DATA
CURCUIT
CE#
WE#
OE#
CONTROL
CIRCUIT
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A14
Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
Vcc
Power Supply
Vss
Ground
1
COLUMN I/O
DCC-SR-041001-A