EM6128K800V Datasheet, PDF (1/14 Pages) Eorex Corporation – 128Kx8 LP SRAM

128Kx8 LP SRAM EM6128K800V Series
GENERAL DESCRIPTION
The EM6128K800V is a 1,048,576-bit low power CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6128K800V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6128K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
z Fast access time: 35/55/70ns
z Low power consumption:
Operating current:
12/10/7mA (TYP.)
Standby current: -L/-LL version
20/1µA (TYP.)
z Single 2.7V ~ 3.6V power supply
z All inputs and outputs TTL compatible
z Fully static operation
z Tri-state output
z Data retention voltage: 1.5V (MIN.)
z Package:
32-pin 450 mil SOP
32-pin 600 mil P-DIP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A16
DECODER
128Kx8
MEMORY
ARRAY
DQ0-DQ7
I/O DATA
CURCUIT
CE#
WE#
OE#
CE2
CONTROL
CIRCUIT
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A16
Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE#, CE2
Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
Vcc
Power Supply
Vss
Ground
COLUMN I/O
1
DCC-SR-041004-A