EM488M1644VTG_15 Datasheet, PDF (1/18 Pages) Eorex Corporation – Synchronous DRAM

eorex
EM488M1644VTG
128Mb (2M4Bank16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V 0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are sampled at the Rising Edge of the
System Clock
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms (15.6us)
Description
The EM488M1644VTG is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
2Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 128Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
EM488M1644VTG is available in TSOPII 54Pin
package.
Ordering Information
Part No
EM488M1644VTG-7F
Organization
8M X 16
EM488M1644VTG-6F
8M X 16
EM488M1644VTG-7FE
8M X 16
EM488M1644VTG-6FE
8M X 16
Max. Freq
143MHz @CL3
166MHz @CL3
143MHz @CL3
166MHz @CL3
Package
54pin TSOPll
54pin TSOPll
54pin TSOPll
54pin TSOPll
Grade
Commercial
Commercial
Extended
Extended
Pb
Free
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Jan. 2014
www.eorex.com
1/18