EM488M1644VTB_EV Datasheet, PDF (1/18 Pages) Eorex Corporation – 128Mb (2Mx4Bankx16) Synchronous DRAM

EM488M1644VTB
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128Mb (2Mx4Bankx16) Synchronous DRAM
Feature
• Fully synchronous to positive clock edge
• Single 3.3V +/- 0.3V power supply
• LVTTL compatible with multiplexed address
• Programmable Burst Length (B/ L) - 1,2,4, 8
or full page
• Programmable CAS Latency (C/ L) - 2 or 3
• Data Mask (DQM) for Read / Write masking
• Programmable wrap sequence
– Sequential (B/ L = 1/2/4/8/full page )
– Interleave (B/ L = 1/2/4/8 )
• Burst read with single-bit write operation
• All inputs are sampled at the rising edge of
the system clock.
• Auto refresh and self refresh
• 4,096 refresh cycles / 64ms (15.625us)
Description
The EM488M1644VTB is Synchronous
Dynamic Random Access Memory (SDRAM)
organized as 2Meg words x 4 banks x 16
bits.All inputs and outputs are synchronized
with the positive edge of the clock.
The 128Mb SDRAM uses synchronized
pipelined architecture to achieve high
speed data transfer rates and is designed to
operate at 3.3V low power memory system.
It also provides auto refresh with power
saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Packages: TSOPII 54P 400mil
Ordering Information
Part No
Organization Max. Freq
Package
Power
EM488M1644VTB –75FL 8M X16 133MHz @CL3 54pin TSOP (II) Low power
EM488M1644VTB –7FL
8M X16 143MHz @CL3 54pin TSOP (II) Low power
Pb
Free
Free
* EOREX reserves the right to change products or specification without notice.
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