EM42AM1684RTB Datasheet, PDF (1/19 Pages) Eorex Corporation – 256Mb (4M×4Bank×16) Double DATA RATE SDRAM

eorex
EM42AM1684RTB
256Mb (4M×4Bank×16)
Double DATA RATE SDRAM
Features
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
• VDD=VDDQ= 2.5V ±0.2V (DDR-333)
• VDD=VDDQ= 2.6V ±0.1V (DDR-400)
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• 2,2.5,3 Clock read latency
• Bi-directional,intermittent data strobe(DQS)
• All inputs except data and DM are sampled
at the positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ & DQS transitions with CLK
transition
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
Ordering Information
Description
The EM42AM1684RTB is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 268,435,456 bits which
organized as 4Meg words x 4 banks by 16 bits.
The 256Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits and
It transfers the datafor both rising and falling edges
of the system clock.It means the doubled data
bandwidth can be achieved at the I/O pins.
Available packages:TSOPII 66P 400mil.
Part No
Organization Max. clk Freq Package
Grade
Pb
EM42AM1684RTB-5F
16M X 16 200MHz @CL3 66pin TSOP(ll) Commercial Free
EM42AM1684RTB-6F
16M X 16 166MHz @CL25 66pin TSOP(ll) Commercial Free
* EOREX reserves the right to change products or specification without notice.
Jun. 2009
www.eorex.com
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