EN25S20 Datasheet, PDF (5/34 Pages) Eon Silicon Solution Inc. – 2 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S20
MEMORY ORGANIZATION
The memory is organized as:
z 262,144 bytes
z Uniform Sector Architecture
4 blocks of 64-Kbyte
64 sectors of 4-Kbyte
z 1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
3
Sector
63
62
61
60
59
Address range
03F000h
03FFFFh
03E000h
03EFFFh
03D000h
03DFFFh
03C000h
03CFFFh
03B000h
03BFFFh
48
47
2
32
31
1
16
15
4
0
3
2
1
0
030000h
02F000h
020000h
01F000h
010000h
00F000h
004000h
003000h
002000h
001000h
000000h
030FFFh
02FFFFh
020FFFh
01FFFFh
010FFFh
00FFFFh
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/11/07
www.eonssi.com