EN25B40 Datasheet, PDF (36/36 Pages) Eon Silicon Solution Inc. – 4 Mbit Serial Flash Memory with Boot and Parameter Sectors

EN25B40
(2) Change 64KB Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
(3) Change 16KB Sector erase time 0.15 / 0.3 seconds to
0.5 / 1 seconds for typical and maximum
(4) Change 4KB Sector erase time 0.1 / 0.2 seconds to
0.3 / 0.6 seconds for typical and maximum
(5) Change Chip erase time 2.7 / 5.4 seconds to 5 / 10
seconds for typical and maximum
5. Add 8-pin PDIP in Package Mechanical in page 32
6. Add 8-pin PDIP package option ‘Q’ and 75MHz option to
ordering information in page 33
E
1. _{Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V} 2007/5/3
in page 22
2. Change Table 8. DC Characteristics V_IL Max from 0.3 V_CC to
0.2 V_CC in page 23
3. Change Table 10. 75MHz AC Characteristics t_CLQV Max
from 6 ns to 8 ns in page 24
This Data Sheet may be revised by subsequent versions ₃₆ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2007/5/3