EN39SL160AH Datasheet, PDF (35/50 Pages) Eon Silicon Solution Inc. – 16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

Table 14. AC CHARACTERISTICS
(Ta = - 40°C to 85°C or - 45°C to 125°C; VCC = 1.65-1.95V)
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Description
JEDEC Standard
t_AVAV
t_WC
Write Cycle Time (Note 1)
Min
t_AVEL
t_AS
Address Setup Time
Min
t_ELAX
t_AH
Address Hold Time
Min
t_DVEH
t_DS
Data Setup Time
Min
t_EHDX
t_DH
Data Hold Time
Min
t_OES
Output Enable Setup Time
Min
t_GHEL
t_GHEL
Read Recovery Time before Write
(OE# High to CE# Low)
Min
t_WLEL
t_WS
WE# Setup Time
Min
t_EHWH t_WH
WE# Hold Time
Min
t_ELEH
t_CP
CE# Pulse Width
Min
t_EHEL
t_CPH
CE# Pulse Width High
Min
t_WHWH1 t_WHWH1 ^{Programming Operation (Note 2)}
Typ
t_WHWH2 t_WHWH2
Erase Operation
(Note 2)
Sector
Typ
Block
Typ
Chip
Typ.
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance for more information.
EN39SL160AH/L
Speed Options
-70
-90
Unit
70
90
ns
0
ns
45
ns
30
40
ns
0
ns
0
ns
0
ns
0
ns
0
ns
35
45
ns
20
ns
8
µs
0.09
s
0.18
s
4
s
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35 ^{©2004 Eon Silicon Solution, Inc.,}
Rev. C, Issue Date: 2011/09/15
www.eonssi.com