EN25S40_11 Datasheet, PDF (34/34 Pages) Eon Silicon Solution Inc. – 4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Revisions List
EN25S40
Revision No Description
A
Initial Release
B
1. Update Block erase time from 0.4s to 0.5s (typ.) on page 1 and 25.
2. Remove 3Bh, BBh functions and relevant descriptions.
1. Update DC Characteristics in Table 9 on page 24.
(1). Icc3 (Read) from 14mA to 12mA for 75MHz
Icc3 (Read) from 11mA to 9mA for 33MHz
(2). Icc4 (PP) from 15mA to 22mA.
(3). Icc5 (WRSR) from 15mA to 22mA
(4). Icc6 (SE) from 15mA to 22mA
C
(5). Icc7 (BE) from 15mA to 22mA
(6). V_IL from 0.2Vcc to 0.3Vcc (max.)
2. Update AC Characteristics in Table 11 on page 25.
(1). t_CLQV from 8ns to 11ns (max.).
(2). t_W from 20ms / 50ms to 10ms / 15ms (typ. / max.)
(3). Page Program time from 1.3ms to 1.5ms (typ.)
(4). Chip Erase time from 3.5s / 10s to 4s / 12s (typ. / max.)
D
Modify t_CLQV from 11ns to 9ns (max.) in Table 11 on page 25.
Update AC Characteristics in Table 11 on page 25.
E
(1) Page Programming Time from 5ms to 3ms (max)
(2) Chip Erase time from 12s to 7s (max)
F
Revive Page Programming Time from 3ms to 5ms (max) on page 25.
G
Remove the package option of 8-pin VDFN (2x3mm).
H
Add 8-pin USON (2x3 mm) package option.
Date
2009/04/28
2009/09/08
2010/04/13
2010/07/14
2010/07/16
2011/04/22
2011/06/14
2011/11/07
This Data Sheet may be revised by subsequent versions
34
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/11/07
www.eonssi.com