EN29LV320A Datasheet, PDF (33/49 Pages) Eon Silicon Solution Inc. – 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Test Conditions
Device under Test
C_L
EN29LV320A
3.3 V
2.7 kΩ
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Test Specifications
Test Conditions
-70
-90
Unit
Output Load
1 TTL Gate
Output
Load
Capacitance,
C_LB
B
30
100
pF
Input Rise and Fall times
5
5
ns
Input Pulse Levels
0.0-3.0 0.0-3.0
V
Input timing measurement
reference levels
1.5
1.5
V
Output timing measurement
reference levels
1.5
1.5
V
Notes:
1. Vcc=3.0 – 3.6 V for 70ns read operation
This Data Sheet may be revised by subsequent versions ₃₃ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/07/17