EN25B20 Datasheet, PDF (31/32 Pages) Eon Silicon Solution Inc. – 2 Mbit Serial Flash Memory with Boot and Parameter Sectors

Revisions List
EN25B20
Revision No Description
Date
A
Initial release
2006/03/24
B
1. Add op-code: 9Fh and its description in page 20
2006/08/04
2. Add 3 specific op-codes to IDs in Table 5 of page 9
3. Change note 5 description in page 9
4. Change the description of FEATURES in page 1
(1) byte program time from 8 to 7µs,
(2) add page program time: 1.4ms,
(3) sector erase time from
“150ms to 500ms” to “100ms to 300ms”
(4) chip erase time from 2.5 sec to 1.5 sec
5. Change Table 10 AC Characteristics in page 23
(1) Data In Setup Time from 5ns to 2ns,
(2) 64KB sector erase time from 0.5 sec to 0.3 sec typical
64KB sector erase time from 1 sec to 0.6 sec max,
(3) 16KB sector erase time from 0.2 sec to 0.15 sec typical,
16KB sector erase time from 0.4 sec to 0.3 sec max,
(4) 4KB sector erase time from 0.15 sec to 0.1 sec typical,
4KB sector erase time from 0.3 sec to 0.2 sec max,
(5) bulk erase time from 2.5 sec to 1.5 sec typical
bulk erase time from 5 sec to 3 sec max.
6. Change ICC1, ICC2 in Table 8 from 10µA to 20µA in page 22
7. Add INSTRUCTIONS description in page 8
C
1. _{Change clock rate from 50MHz to 75MHz,}
2006/12/26
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 100 to 300 ms typical to 300 to 800 ms
Chip erase time 1.5 seconds to 3 seconds typical
in page 1
2. Change Table 8 DC Characteristics in page 22
(1) Add ICC3 for 75MHz
3. Change Table 10 to 75MHz AC Characteristics in page 23
(1) Change F_R from 50 to 75MHz
(2) Change f_R from 33 to 50MHz
(3) Change t_CLH from 9ns to 6ns
(4) Change t_CLL from 9ns to 6ns
(5) Change t_SHQZ from 9ns to 6ns
(6) Change t_HLQZ from 9ns to 6ns
(7) Change t_HHQZ from 9ns to 6ns
(8) Change t_CLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10) Change 64KB Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
(11) Change 16KB Sector erase time 0.15 / 0.3 seconds to
0.5 / 1 seconds for typical and maximum
(12) Change 4KB Sector erase time 0.1 / 0.2 seconds to
0.3 / 0.6 seconds for typical and maximum
(13) Change Chip erase time 1.5 / 3 seconds to 3 / 6
seconds for typical and maximum
4. Add Table 11: 50MHz AC Characteristics in page 24
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change 64KB Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
This Data Sheet may be revised by subsequent versions ₃₁ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2006/12/26