EN29PL064_11 Datasheet, PDF (30/57 Pages) Eon Silicon Solution Inc. – 64 Mbit (4 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory

EN29PL064
After writing the Starting Address/Data pair, the system then writes the remaining address/data pars into
the write buffer. Write buffer locations may be loaded in any order.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter will
be decremented for every data load operation. Also, the last data loaded at a location before the
“Program Buffer to Flash” confirm command will be programmed into the device. It is the software’s
responsibility to comprehend ramifications of loading a write-buffer location more than once. The
counter decrements for each data load operation, NOT for each unique write-buffer-address
location.
Once the specified number of write buffer locations have been loaded, the system must then write the
“Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations
will abort the Write Buffer Programming operation. The device will then “go busy”. The Data Bar polling
techniques should be used while monitoring the last address location loaded into the write buffer.
This eliminates the need to store an address in memory because the system can load the last address
location, issue the program confirm command at the last loaded address location, and then data bar poll
at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device
status during Write Buffer Programming.
The write-buffer “embedded” programming operation can be suspended using the standard
suspend/resume commands. Upon successful completion of the Write Buffer Programming operation,
the device will return to READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
▇ Load a value that is greater than the page buffer size during the “Number of Locations to Program”
step.
▇ Write to an address in a sector different than the one specified during the “Write-Buffer-Load”
command.
▇ Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting
Address” during the “write buffer data loading” stage of the operation.
▇ Write data other than the “Confirm Command” after the specified number of “data load” cycle.
The ABORT condition is indicated by DQ 1 = 1, DQ7 = DATA# (for the “last address location loaded”),
DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED.
A “Write-to-Buffer-Abort reset” command sequence is required when using the Write Buffer
Programming feature in Accelerated Program mode. Note that the Secured Silicon sector, autoselect,
and CFI functions are unavailable when a program operation is in progress.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is allowed in any sequence of memory (or address) locations.
These flash devices are capable of handling multiple write buffer programming operations on the same
write buffer address range without intervening erases.
This Data Sheet may be revised by subsequent versions ₃₀
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. K, Issue Date: 2010/12/27
www.eonssi.com