EN29LV400A Datasheet, PDF (28/41 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Table 9. AC CHARACTERISTICS
EN29LV400A
Write (Erase/Program) Operations
Parameter
Symbols
JEDEC Standard
Description
t_AVAV
t_WC
Write Cycle Time
Speed Options
-45R -55R -70
-90
Unit
Min
45
55
70
90
ns
t_AVWL
t_AS
Address Setup Time
Min
0
0
0
0
ns
t_WLAX
t_AH
Address Hold Time
Min
35
45
45
45
ns
t_DVWH
t_DS
Data Setup Time
Min
20
25
30
45
ns
t_WHDX
t_DH
Data Hold Time
Min
0
0
0
0
ns
t_OES
Output Enable Setup Time
Min
0
0
0
0
ns
t_OEH
Output Enable
Hold Time
Read
Toggle and
Data# Polling
MIn
Min
0
10
0
10
0
10
0
10
ns
ns
t_GHWL
t_GHWL
Read Recovery Time before
Write (OE# High to WE# Low)
Min
0
0
0
0
ns
t_ELWL
t_CS
CE# SetupTime
Min
0
0
0
0
ns
t_WHEH
t_CH
CE# Hold Time
Min
0
0
0
0
ns
t_WLWH
t_WP
Write Pulse Width
Min
25
30
35
45
ns
t_WHDL
t_WPH
Write Pulse Width High
Min
20
20
20
20
ns
t_WHWH1 t_WHWH1
t_WHWH2
t_WHWH2
t_VCS
t_VIDR
Programming Operation
(Word AND Byte Mode)
Sector Erase Operation
Vcc Setup Time
Rise Time to V_ID
Typ
8
8
8
8
µs
Max 300 300 300 300
µs
Typ
0.5
0.5
0.5
0.5
s
Min
50
50
50
50
µs
Min
500
500
500
500
ns
This Data Sheet may be revised by subsequent versions ₂₈ ©2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/01/07