EN29LV160C Datasheet, PDF (26/44 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Table 11. DC Characteristics
(T_a = - 40°C to 85°C; V_CC = 2.7-3.6V)
Symbol
Parameter
I_LI
I_LO
I_CC1
Input Leakage Current
Output Leakage Current
Active Read Current ( Byte mode)
Active Read Current ( Word mode)
I_CC2
Supply Current (Standby-
CMOS)
I_{CC3 Supply Current (Program or Erase)}
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL ; OE# = V_{IH ;}
f = 5MHZ
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
I_CC4 B
B
Reset Current
I_CC5 B
B
V_IL
V_IH
V_OL
Automatic Sleep Mode
Input Low Voltage
Input High Voltage
Output Low Voltage
RESET# = Vss ± 0.3V
V_IH B
B
= Vcc ± 0.3V
V_ILB
B
= Vss ± 0.3V
I_OL = 4.0 mA
V_OH
Output High Voltage CMOS
I_OH = -100μA
V_ID
I_ID
V_LKO
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
A9 = V_ID
Min
-0.5
0.7 x
Vcc
Vcc -
0.4V
8.5
2.3
EN29LV160C
Typ ^{Max Unit}
±5
µA
±5
µA
9
16
mA
9
16
mA
1
5.0
µA
20
30
mA
1
5.0
µA
1
5.0
µA
0.8
V
Vcc +
0.3
V
0.45
V
V
9.5
V
100
µA
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they
draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
26
or modifications due to changes in technical specifications.
© 2004 Eon Silicon Solution, Inc.,
Rev. C, Issue Date: 2011/10/26
www.eonssi.com