EN29LV800B Datasheet, PDF (24/41 Pages) Eon Silicon Solution Inc. – 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

Test Conditions
Device Under Test
C_L
EN29LV800B
3.3 V
2.7 kΩ
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Test Specifications
Test Conditions
-55R
-70
-90
Unit
Output Load
1 TTL gate
Output Load Capacitance, C_L
30
100
100
pF
Input Rise and Fall times
5
5
5
ns
Input Pulse Levels
0.0-3.0 0.0-3.0 0.0-3.0
V
Input timing measurement
reference levels
1.5
1.5
1.5
V
Output timing measurement
reference levels
1.5
1.5
1.5
V
This Data Sheet may be revised by subsequent versions ₂₄ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2006/05/16