EN29F040A Datasheet, PDF (21/35 Pages) Eon Silicon Solution Inc. – 4 Megabit (512K x 8-bit) Flash Memory

EN29F040A
Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 5.0V ± 10%)
Symbol
I_LI
I_LO
I_CC1
I_CC2
I_CC3
I_CC4
V_IL
V_IH
V_OL
V_OH
V_ID
I_LIT
V_LKO
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL Byte
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Program or Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE = V_IL; OE = V_IH;
f = 6MHz
CE = V_IH
CE = Vcc ± 0.3V
Byte program, Sector or Chip
Erase in progress
I_OL = 2 mA
I_OH = -2.5 mA
I_OH = -100 µA
A9 = V_ID
Min
-0.5
2
2.4
Vcc -
0.4V
10.5
3.2
Max
Unit
±5
µA
±5
µA
30
mA
1.0
MA
5.0
µA
30
mA
0.8
V
Vcc +
0.5
V
0.45
V
V
V
11.5
V
100
µA
4.2
V
This Data Sheet may be revised by subsequent versions ₂₁ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/04/01