EN25S40 Datasheet, PDF (10/37 Pages) Eon Silicon Solution Inc. – 4 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

Table 4A. Instruction Set
EN25S40
Instruction Name
Byte 1
Code
Byte 2
Byte 3
Write Enable
06h
Write Disable / Exit
OTP mode
04h
Read Status
Register
05h
Write Status
Register
01h
Page Program
02h
Sector Erase / OTP
erase
20h
Block Erase
D8h
(S7-S0)(3)
S7-S0
A23-A16 A15-A8
A23-A16 A15-A8
A23-A16 A15-A8
Chip Erase
C7h/ 60h
Deep Power-down B9h
Release from Deep
Power-down, and
read Device ID
ABh
Release from Deep
Power-down
Manufacturer/
90h
Device ID
Read Identification 9Fh
Enter OTP mode
3Ah
dummy
dummy
dummy
(M7-M0)
dummy
(ID15-ID8)
Byte 4 Byte 5
A7-A0
A7-A0
A7-A0
D7-D0
dummy (ID7-ID0)
00h
01h
(ID7-ID0)
(M7-M0)
(ID7-ID0)
(7)
Byte 6 n-Bytes
continuous(4)
Next byte continuous
(5)
(ID7-ID0) (6)
(M7-M0)
Notes:
1. (BR7-BR0) : The output data of block protection register.
2. The Block Protection Registers contents will repeat continuously until CS# terminates the instruction.
3. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the
device on the DO pin.
4. The Status Register contents will repeat continuously until CS# terminate the instruction.
5. The Device ID will repeat continuously until CS# terminates the instruction.
6. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminates the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
7. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity.
This Data Sheet may be revised by subsequent versions
10
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/04/28
www.eonssi.com