EN39SL160H Datasheet, PDF (1/52 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

EN39SL160H/L
EN39SL160H/L
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With
4Kbytes Uniform Sector, CMOS 1.8 Volt-only
FEATURES
• Single power supply operation
- Full voltage range:1.65-1.95 volt for read and
write operations.
- Ideal for battery-powered applications.
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 5 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
• Uniform Sector Architecture:
- 512 sectors of 4-Kbyte / 2-Kword
- 32 blocks of 64-Kbyte / 32-Kword
- Any sector or block can be erased individually
• WP#/ACC Input pin:
- Write protect (WP#) function allows protection
the first or last blocks, regardless of block
protect status
- Acceleration (ACC) function acceleration
program timing.
• Block protection:
- Hardware locking of blocks to prevent
program or erase operations within individual
blocks
- Additionally, temporary Block Unprotect
allows code changes in previously locked
blocks.
• High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 90ms typical
- Block erase time: 400ms typical
- Chip erase time: 7 s typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector, Block and Chip Erase
• Block Unprotect Mode
• Erase Suspend / Resume modes:
Read or program another Sector/Block during
Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
- 48-ball 4mm x 6mm WFBGA
• Industrial temperature Range
GENERAL DESCRIPTION
The EN39SL160H/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.The
EN39SL160H/L features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN39SL160H/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block
or full chip erase operation, where each block can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/07/13
www.eonssi.com