EN29SL160 Datasheet, PDF (1/46 Pages) Eon Silicon Solution Inc. – 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

EN29SL160
EN29SL160
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
• Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Regulated voltage range: 1.8-2.2 volt read
and write operations
• High performance
- Access times as fast as 90 ns
• Low power consumption (typical values
at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
• Flexible Sector Architecture:
- Eight 8-Kbyte and thirty-one 64-Kbyte sectors
(byte mode)
- Eight 4-Kword and thirty-one 32-Kword
sectors (word mode)
• WP#/ACC Input pin:
- Write protect (WP#) function allows protection
of two outermost boot sectors, regardless of
sector protect status
- Acceleration (ACC) function acceleration
program timing.
• Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
• High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Unlock Bypass Program command supported
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm TFBGA
- 48-ball 5mm x 6mm WFBGA
- 48-ball 5mm x 6mm WLGA
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL160 is an 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.
The EN29SL160 features 1.8V voltage read and write operation, with access time as fast as 90ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL160 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions ₁
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09