EN29LV641H Datasheet, PDF (1/46 Pages) Eon Silicon Solution Inc. – 64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory

EN29LV641H/L EN29LV640U
EN29LV641H/L EN29LV640U
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only
Uniform Sector Flash Memory
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 µA current in standby or automatic
sleep mode.
• JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
• Manufactured on 0.18DŽm process
technology
• Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word
sectors.
• Minimum 100K program/erase endurance
cycles.
• High performance for program and erase
- Word program time: 8µs typical
- Sector Erase time: 500ms typical
- Chip Erase time: 64s typical
• Package Options
- 48-pin TSOP
- 63 ball 11mm x 12mm FBGA
„ Software features:
• Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
• Standard DATA# polling and toggle bits
feature
• Unlock Bypass Program command supported
• Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
„ Hardware features:
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
• WP# input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
• ACC input pin
- Acceleration (ACC) function provides
accelerated program times for higher
throughput for manufacturing.
GENERAL DESCRIPTION
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write
non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions ₁
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27