EN29LV640A Datasheet, PDF (1/53 Pages) Eon Silicon Solution Inc. – 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EN29LV640A
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640A
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 90 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA current in standby or automatic
sleep mode.
• Flexible Sector Architecture:
- Eight 8-Kbyte sectors, One hundred and
twenty-seven 32K-Word / 64K-byte sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• Secured Silicon Sector
- Provides a 128-words area for code or data
that can be permanently protected.
- Once this sector is protected, it is prohibited
to program or erase within the sector again.
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 100ms typical
- Chip erase time: 16s typical
• JEDEC Standard compatible
• Standard DATA# polling and toggle bits
feature
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
• Low Vcc write inhibit < 2.5V
• Minimum 100K program/erase endurance
cycles.
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
• WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA
• Industrial Temperature Range.
GENERAL DESCRIPTION
The EN29LV640A is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The
EN29LV640A features 3.0V voltage read and write operation, with access times as fast as 90ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV640A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or
full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2011/10/26
www.eonssi.com