EN25F40 Datasheet, PDF (1/33 Pages) Eon Silicon Solution Inc. – 4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector

EN25F40
EN25F40
4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 4 Mbit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 128 sectors of 4-Kbyte
- 8 blocks of 64-Kbyte
- Any sector or block can be
erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 5 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25F40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25F40 is designed to allow either single Sector at a time or full chip erase operation. The
EN25F40 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions ₁
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/09