EM48AM1684VBE Datasheet, PDF (1/17 Pages) Eorex Corporation – 256Mb (4M×4Bank×16) Synchronous DRAM

eorex
EM48AM1684VBE
256Mb (4M×4Bank×16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 2.7V ~ 3.6V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are sampled at the Rising Edge of the
System Clock
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms (7.8us)
Description
The EM48AM1684VBE is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
4Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 256Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages: FBGA 54B 8mm x 8mm.
Ordering Information
Part No
EM48AM1684VBE-7F
EM48AM1684VBE-7FE
EM48AM1684VBE-75F
EM48AM1684VBE-75FE
Organization
16M X 16
16M X 16
16M X 16
16M X 16
Max. Freq
143MHz @CL3
143MHz @CL3
133MHz @CL3
133MHz @CL3
Package
FBGA -54B
FBGA -54B
FBGA -54B
FBGA -54B
Grade
Commercial
Extended
Commercial
Extended
Pb
Free
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Oct. 2011
www.eorex.com
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