EM621FV16BU Datasheet, PDF(9/11 Page) Emerging Memory & Logic Solutions Inc – 128K x16 bit Low Power and Low Voltage Full CMOS Static RAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

EM621FV16BU Datasheet, PDF (9/11 Pages) Emerging Memory & Logic Solutions Inc – 128K x16 bit Low Power and Low Voltage Full CMOS Static RAM

◁

EM621FV16BU Series

Low Power, 128Kx16 SRAM

DATA RETENTION CHARACTERISTICS

Parameter

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

Symbol

VDR

IDR

tSDR

tRDR

Test Condition

ISB1 Test Condition

(Chip Disabled) 1)

VCC=1.5V, ISB1 Test Condition

(Chip Disabled) 1)

See data retention wave form

Min Typ2) Max Unit

1.5

3.6

0.5 5.0

ÂµA

tRC

NOTES

1. See the ISB1 measurement condition of data sheet page 4.

2. Typical value is measured at TA=25oC and not 100% tested.

DATA RETENTION WAVE FORM

Vcc

3.0V

tSDR

2.2V

VDR

GND

Data Retention Mode

CS > Vcc-0.2V

tRDR

▷