EMP116MGAW Datasheet, PDF (8/12 Pages) Emerging Memory & Logic Solutions Inc – 21Mx16 Pseudo Static RAM

Preliminary
EMP116MGAW Series
1Mx16 Pseudo Static RAM
PAGE READ CYCLE (ZZ#=WE#=V_IH, 16 Words access)
Address
(A19~A4)
Address
(A3~A0)
CS#
LB#,UB#
OE#
Data
Out
High-Z
t_MRC
t_RC
t_PC
t_PC
t_PC
t_PC
t_AA
t_CO
t_BA
t_OH
t_HZ
t_OE
t_OLZ
t_BLZ
t_LZ
t_BHZ
t_PAA
t_PAA
t_PAA
t_PAA
t_OHZ
Data Valid Data Valid Data Valid Data Valid Data Valid
NOTES (READ CYCLE)
1. t_HZ , t_BHZ and t_OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels.
2. Do not Access device with cycle timing shorter than t_RC for continuous periods > 1us.
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Rev 0.0