EM611FV16U Datasheet, PDF (4/11 Pages) Emerging Memory & Logic Solutions Inc – 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

merging Memory & Logic Solutions Inc.
RECOMMENDED DC OPERATING CONDITIONS ¹⁾
EM611FV16U Series
Low Power, 64Kx16 SRAM
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
V_CC
V_SS
V_IH
V_IL
Min
2.7
0
2.2
-0.2 ^{3 )}
Typ
Max
Unit
3.3
3.6
V
0
0
V
-
V_CC + 0.2²⁾
V
-
0.6
V
1. TA= -40 to 85^oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE¹⁾ (f =1MHz, T_A=25^oC)
Item
Input capacitance
Input/Ouput capacitance
Symbol
C_IN
C_IO
Test Condition
Min
Max
Unit
V_IN=0V
-
8
pF
V_IO =0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
I_LI
V_IN=V_SS to V_CC
-1
-
1 µA
Output leakage current
I_LO CS=V_IH or OE=V_IH or WE=V_IL, V_IO=V_SS to V_CC
-1
-
1 µA
Operating power supply
Average operating current
I_CC
I_CC1
I_CC2
I_IO=0mA, CS=V_IL, V_IN=V_IH or V_IL
Cycle time=1µs, 100% duty, I_IO=0mA,
CS<0.2V, V_IN <0.2V or V_IN>V_CC-0.2V
Cycle time = Min, I_IO=0mA, 100% duty,
CS=V_IL , V_IN=V_IL or V _IH
-
-
55ns -
70ns -
-
3 mA
-
3 mA
- 26
mA
- 20
Output low voltage
V_OL I_OL = 2.1mA
-
- 0.4 V
Output high voltage
V_OH I_OH = -1.0mA
2.4
-
-
V
Standby Current (TTL)
I_SB CS=V_IH, Other inputs=V_IH or V_IL
-
- 0.3 mA
Standby Current (CMOS)
CS>V_CC-0.2V Other inputs=0~V_CC
I_SB1 (Typ. condition : V_CC=3.3V @ 25^oC)
(Max. condition : V_CC=3.6V @ 85^oC)
LL
LF
- _0.5¹⁾ 5 µA
NOTES
1. Typical values are measured at Vcc=3.3V, T _A=25^oC and not 100% tested.
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