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RMLD232UAW Datasheet, PDF (31/50 Pages) Emerging Memory & Logic Solutions Inc – 2M x 32 bit Low Power DDR SDRAM
Advanced
64Mb Low Power DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, Temp = -25 to 85 ¦ )
Parameter
Symbol
Test Condition
DDR
266
DDR
222
Unit
Operating Current
tRC=tRCmin; tCK=tCKmin ; CKE is HIGH; CS is HIGH between valid
(One Bank Active/Precharge
IDD0
commands; address inputs are switching every two clock cycles;
80
current)
Data bus inputs are stable
75
§
Operating Current
(One Bank Active-Read-Pre-
charge current; Burst=4)
IDD1
tRC=tRCmin;
tCK=tCKmin
;
CKE
is
HIGH;
IOUT
=
0

;
Address and control inputs changing once per clock cycle
100
95
§
All banks idle, CKE is LOW; CS is HIGH, tCK=tCKmin;
IDD2P Address and control inputs are switching every two clock cycles;
0.5
Precharge Standby
Data bus inputs are stable
Current in power-down
§
mode
All banks idle, CKE is LOW; CS is HIGH, CK=LOW, CK=HIGH;
IDD2PS address and control inputs are switching every two clock cycles;
0.5
Data bus inputs are stable
All banks idle, CKE is HIGH; CS is HIGH, tCK=tCKmin; Address and
IDD2N control inputs are switching every two clock cycles;
20
Precharge Standby
Data bus inputs are stable
Current in non power-down
mode
All banks idle, CKE is HIGH; CS is HIGH, CK=LOW, CK=HIGH;
IDD2NS Address and control inputs are switching every two clock cycles;
10
Data bus inputs are stable
15
§
10
One bank active, CKE is LOW; CS is HIGH, tCK=tCKmin;
IDD3P Address and control inputs switching every two clock cycles;
5
Active Standby Current
Data bus inputs are stable
in power-down mode
§
One bank active, CKE is LOW; CS is HIGH, CK=LOW, CK=HIGH;
IDD3PS Address and control inputs are switching every two clock cycles;
3
Data bus inputs are stable
Active Standby Current
in non power-down mode
(One Bank Active)
One bank active, CKE is HIGH; CS is HIGH, tCK=tCKmin;
IDD3N Address and control inputs switching every two clock cycles;
25
Data bus inputs are stable
One bank active, CKE is HiGH; CS is HIGH, CK=LOW, CK=HIGH;
IDD3NS Address and control inputs are switching every two clock cycles;
20
Data bus inputs are stable
20
§
15
§
Operating Current
(Burst Mode)
One bank active; BL=4; CL=3; tCK=tCKmin; Continuous read bursts;
IDD4R
IOUT
=
0

; Address inputs are switching;
120
50% data change each burst tranfer
IDD4W
One bank active; BL=4; tCK=tCKmin; Continuous write bursts;
Address inputs are switching; 50% Data change each burst transfer
100
115
§
95
§
Refresh Current
IDD5
tRC=tRFCmin; tCK=tCKmin; burst refresh; CKE is HIGH;
Address and control inputs are switching; Data businputs are stable
100
95
§
Self Refresh Current
IDD6
CKE is LOW; tCK= tCKmin ;
Extended Mode Register set to all 0’s; address
and control inputs are stable; Data bus inputs
are stable
TCSR Range
4 Banks
2 Banks
Max
Max
45
85
¦
220
250
170
190
¨
1 Bank
135
150
Deep Power Down Current
IDD8*1 Address and control inputs are stable; Data bus inputs are stable
10
¨
NOTE :
1. DPD (Deep Power Down) function is an optional feature, and it will be enabled upon request.
Please contact Ramsway for more information.
2. IDD specifications are tested after the device is properly intialized.
3. Input slew rate is 1V/ .
©
4. Definitions for IDD:
LOW is defined as VIN  0.1*VDDQ;
HIGH is defined as VIN  0.9*VDDQ;
31
Rev 0.7