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EM828164PA Datasheet, PDF (28/48 Pages) Emerging Memory & Logic Solutions Inc – 128M: 8M x 16 Mobile SDRAM
Power up & Initialization Sequence
Preliminary
EM828164PA
128M: 8M x 16 Mobile SDRAM
VDD
VDDQ
CLK
CKE
tCK
tCH tCL
LVTTL HIGH LEVEL
tIS tIH
NOP2
NOP
PRE
AR
AR
MRS
EMRS
ACT
NOP3
NOP
DQM
A0-A9,
A11
A10
BA0, BA1
DQ
High-Z
tIS tIH
CODE CODE
RA
tIS tIH
CODE CODE
RA
tIS tIH
BA0=L
BA1=L
BA0=H
BA1=L
BA
T=100us
Power-up:
VDD and CLK stable
tRP4
tRFC4
tRFC4
tMRD4
tMRD4
Load Extended
Mode Mode
Register Register
Notees: 1. PRE = PRECHARGE command, MRS = LOAD MODE REGISTER command, AR = AUTO REFRESH command
ACT = ACTIVE command, RA = Row address, BA = Bank address
2. NOP or DESELECT commands are required for at least 100us.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
28
Rev 0.1