G1033-032 Datasheet, PDF (2/3 Pages) Emcore Corporation – 1490 nm GPON Laser Diode Chip

G1033-032, 1490 nm GPON Laser Diode Chip
DATASHEET | SEPTEMBER 2015
Chip Electrical/Optical Performance Characteristics
Parameter
Operating Temperature
Threshold Current
Slope Efficiency
DC Resistance
Operating Voltage
Central Wavelength¹
Side Mode Suppression Ratio
Beam Divergence Angle, Vertical
Beam Divergence Angle, Horizontal
Laser Reverse Voltage
Laser Operating Current²
1 Unless otherwise specified
2 DC
Outline Drawing
Symbol
T_op
I_TH
QE
R
V_OP
λ
SMSR
-
-
V_r
I_op
Condition
-
+25°C
+85°C
+25°C
+85°C
+25°C
-
At Ith+20mA
-
Full Width, Half Max
Full Width, Half Max
-
+25°C
FIBER OPTICS
Min
0
-
-
0.30
0.20
-
-
1470
30
-
-
1
-
Typ
+25
7
26
0.36
4.5
1.3
1490
40
32
27
-
-
Max
+85
20
45
-
-
12
1.5
1510
-
36
30
-
100
Unit
°C
mA
mW/mA
Ω
V
nm
dB
deg
deg
V
mA
Figure 1: Drawing of 1490nm DFB laser diode chip. Top view and cross-sectional views are shown.
| REV 2015.09
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.