G1033-024 Datasheet, PDF (1/3 Pages) Emcore Corporation – 1310 nm GPON DFB Laser Chip

G1033-024, 1310 nm GPON DFB Laser Chip
DATASHEET | SEPTEMBER 2015
FIBER OPTICS
EMCORE’s G1033-024, 1310 nm GPON DFB laser diode chip is designed to
provide the source laser for uncooled PON applications for triple-play for voice,
video and data applications. It is designed to perform the O/E and E/O
conversion in a PON or GPON system.
Applications
Uncooled PON Applications
FTTx Networks
Features
Advanced Digital Chip Design
Wide Operating Temperature Range:
-25 to +85°C
Telcordia Technologies™ 468 Compliant
RoHS Compliant
Performance Highlights
Parameter
Wavelength
Operating Temperature Range
Optical Output Power
Side Mode Suppression Ratio (SMSR)
Min Typical Max
1310
-25
+25
+85
-
-
50
52
-
-
Units
nm
°C
mW
dB
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated
for extended periods of time may effect device reliability.
Parameter
Operating Temperature
Range
Storage Temperature Range
Optical Output Power
Laser Reverse Voltage
Continuous Operating
Current
ESD Susceptibility¹
Symbol
T_op
T_STG
P_o
V_r
I_op
-
Condition
Continuous
Continuous
Continuous
Continuous
Continuous
-
Min Max
Unit
-25
+85
°C
-25
+100
°C
-
50
mW
-
1
V
-
200
mA
-
500
V
1 Based on human-body model of R = 1500 Ohm and C = 100 pF. In general, ESD precautions
should be taken to avoid damage to the device
| REV 2015.09
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.