G1013-406 Datasheet, PDF (1/2 Pages) Emcore Corporation – 2.5G Avalanche Photodiode (APD) Bare Die

G1013-406, 2.5G Avalanche Photodiode (APD)
Bare Die
DATASHEET | SEPTEMBER 2015
FIBER OPTICS
EMCORE’s PS-G1013-406, 2.5G Avalanche Photodiode (APD) Top Illuminated
APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high
responsivity and low capacitance with low noise equivalent power and is ideally
suited for low cost, high-speed data communication designs.
Applications
GPON Products
Features
Advanced Digital Chip Design
Wide operating Temperature Range:
-40 to +85°C
High Responsivity: 0.8A/W@1310nm,
0.9A/W@1550nm
Low Capacitance: 0.5pF Max
Uniform performance across all chips
Telcordia Technologies™ 468 Compliant
RoHS Compliant
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated
for extended periods of time may effect device reliability.
Parameter
Symbol Condition
Min
Max
Operating Temperature Range
T_op
Continuous
-40
+85
Storage Temperature Range
T_STG
Continuous
-40
+85
Forward Current
P_o
Continuous
-
5
ESD-susceptibility*
-
Continuous
500
-
Unit
°C
°C
mA
V
* Based on human-body model of R = 1500 Ohms and C = 100 pF. In general, ESD precautions
should be taken to avoid damage to the device.
Chip Electrical/Optical Performance Characteristics at 25°C
Specified characteristics apply for 25°C at beginning of life (BOL), unless noted
otherwise.
Parameter
Responsivity
Breakdown Voltage
Dark Current
APD Capacitance
High Frequency Cutoff
Bandwidth Flatness
Noise Equivalent Power
V_br Temperature Coefficient
Min Typ Max Unit
0.8
0.9
0.9
1.0
-
-
A/W
40
48
53
V
-
10
50
nA
-
0.35
0.5
pF
2
-
-
GHz
-1
-
+1
dB
3 x 10^-14
-
1 x 10^-13 W/√Hz
-
0.105
-
V/^oC
Condition
λ = 1310 nm, M = 1
λ = 1550 nm, M = 1
I_Dark = 10 mA
Vr=0.9Vb mA
Vr=0.9Vb, f = 1 MHz
R_L = 50 Ω, 3 < M < 10,
200 MHz
R_L = 50 Ω, 3 < M < 10,
0.2 < F < 8 GHz
L = 1550 nm, M = 10
| REV 2015.09
Information contained herein is deemed reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specification at any time without notice.