EM25LV010 Datasheet, PDF (22/30 Pages) ELAN Microelectronics Corp – 1 Megabit (128K x 8) Serial Flash Memory

Symbol
f_C
f_R
t_CH1
t_CL1
t_SLCH
t_CHSL
t_DVCH
t_CHDX
t_CHSH
t_SHCH
t_SHSL
t_SHQZ2
t_CLQV
t_CLQX
t_HLCH
t_CHHH
t_HHCH
t_CHHL
t_HHQX2
t_HLQZ2
t_DP2
t_RES12
t_RES22
t_W
t_PP
t_BE
t_CE
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Test Conditions Specified in Table 10 and Table 11
Alt.
Parameter
Min
Clock frequency for the following instructions:
f_C
FAST_READ, PP, SE, BE, DP, RES, RDID,
D.C.
WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
D.C.
t_CLH
Clock High Time
18
t_CLL
Clock Low Time
18
Clock Slew Rate² (peak to peak)
0.1
t_CSS
S# Active Setup Time (relative to C)
10
S# Not Active Hold Time (relative to C)
10
t_DSU
Data in Setup Time
5
t_DH
Data in Hold Time
5
S# Active Hold Time (relative to C)
10
S# Not Active Setup Time (relative to C)
10
t_CSH
S# Deselect Time
100
t_DIS
Output Disable Time
t_V
Clock Low to Output Valid
t_HO
Output Hold Time
0
Hold# Setup Time (relative to C)
10
Hold# Hold Time (relative to C)
10
Hold Setup Time (relative to C)
10
Hold Hold Time ((relative to C)
10
t_LZ
Hold to Output Low-Z
t_HZ
Hold# to Output High-Z
S# High to Deep Power-down Mode
S# High to Standby Mode without Electronic
Signature Read
S# High to Standby Mode with Electronic
Signature Read
Write Status Register Cycle Time
Page Program Cycle Time
Block Erase Cycle Time
Chip Erase Cycle Time
Table 14: AC Characteristics
Type
3
2
40
40
Max
33
20
15
15
15
20
3
3
1.8
15
5
60
60
Unit
MHZ
MHZ
ns
ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ms
ms
ms
ms
This specification is subject to change without further notice. (11.08.2004 V1.0)
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