EBR25UC8ABFD Datasheet, PDF (7/12 Pages) Elpida Memory – 256MB Direct Rambus™ DRAM RIMM™ Module

EBR25UC8ABFD
Electrical Specifications
Absolute Maximum Ratings
Symbol
Parameter
min.
max.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with
respect to GND
−0.3
VDD + 0.3
V
VDD,ABS
TSTORE
Voltage on VDD with respect to GND
Storage temperature
−0.5
VDD + 1.0
V
−50
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
Edescribed in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
O^{DC Recommended Electrical Conditions}
Symbol
Parameter and conditions
min.
max.
Unit
VDD
Supply voltage*¹
2.50 − 0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad
2.5V controllers
2.50 − 0.13
2.50 + 0.25
V
L_{1.8V controllers}
1.8 − 0.1
1.8 + 0.2
V
VREF
Reference voltage*¹
1.4 − 0.2
1.4 + 0.2
V
SVDD
Serial Presence Detector- positive
supply
power
2.2
3.6
V
Product ^{Note: See Direct RDRAM datasheet for more details.}
Data Sheet E0317E21 (Ver. 2.1)
7